News Article

Toshiba Starts Construction of Fab 6 and Memory R&D Centre in Japan

Monday 13th February 2017

Artist's impression of Fab 6, Yokkaichi Operations

Toshiba Corporation has announced that it has started construction of a new state-of-the-art semiconductor fabrication facility, Fab 6, and a new R&D centre, the Memory R&D Center, at Yokkaichi Operations in Mie prefecture, Japan, the company's main memory production base.

Fab 6 will be dedicated to production of BiCS FLASH, Toshiba's innovative 3D Flash memory¹. Like Fab 5, construction will take place in two phases, allowing the pace of investment to be optimized against market trends, with completion of Phase 1 scheduled for summer 2018. Toshiba will determine installed capacity and output targets and schedules by closely monitoring the market.

Toshiba will also construct a Memory R&D Centre adjacent to the new fab, with completion targeting December 2017. The facility will advance development of BiCS FLASH and new memories.

Toshiba is determined to enhance its competitiveness in the memory business by timely expansion of BiCS FLASH production in line with market trends, and to retain leadership in innovation in the memory business.

Note: [1] A structure that stacks Flash memory cells on a silicon substrate. It realizes significant density improvements over planar NAND Flash memory, where cells are formed on the substrate. *BiCS FLASH is a trademark of Toshiba Corporation

Toshiba Starts Construction of Fab 6 and Memory R&D Centre in Japan

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