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MagnaChip To Commence Volume Production Of High-Voltage IGBT Products





MagnaChip
Semiconductor, a designer and
manufacturer of analog and mixed-signal semiconductor platform solutions, today
announced that volume production has commenced for an IGBT product for power
module targeted to high-voltage industrial applications. IGBT is one of a
MagnaChip family of Power standard products called Insulated Gate Bipolar
Transistors.


The new IGBT P-series
(“MBW100T120PHF”) has both high current and high voltage capabilities of 1200V
and 100A, and has achieved a low saturation voltage
Vce(sat) of 1.71V and low switching
losses by using Field-Stop Trench technology. MBW100T120PHF allows designers to
operate devices at an improved switching frequency, which enables reducing the
size and cost of capacitors and inductive devices in circuits.


To product designers, this
translates into high power density, small size and low material cost of
products. MBW100T120PHF is operable up to four times the rated current, and
with a wide SOA (Safe Operating Area) well-suited for industrial applications
which require high power. In addition, by optimizing the resistance embedded
inside the chip, MBW100T120PHF enables a parallel structure design, which
allows multiple chips to operate simultaneously.


MBW100T120PHF is expected to
improve overall system stability and energy efficiency of applications by
reducing the power loss from DC-AC power conversions for high-voltage
industrial applications, such as 10kW+ 3-phase motor and photovoltaic inverter
systems.


“We are pleased to launch
our newest IGBT P-series product for industrial power modules, with
high-voltage and high-current capabilities of 1200V and 100A,” said YJ Kim, CEO
of MagnaChip. “The introduction of this IGBT P-series product will further
expand our IGBT power product portfolio and enhance our reputations as a market
leader of high-voltage power standard products.”



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