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Hitachi High-Technologies Launch Advanced High Voltage CD-SEM

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Advanced High Voltage CD-SEM "CV6300 Series" (Image)

Hitachi High-Technologies Corporation announced last month the Advanced High
Voltage CD-SEM “CV6300 Series”. CV6300 is the successor of the CV5000 Series,
and enables measurements of high aspect ratio*1 deep holes and trench bottom
dimensions to control the manufacturing of 96 layers or higher 3D-NAND flash
memory*2, as well as high-speed and high-precision overlay*3 measurements. The
CV6300 Series will contribute to productivity improvements in semiconductor
device manufacturing.

In addition to the miniaturization that has been improving
the performance of semiconductor devices, there has been accelerated progress
to make the device structures three-dimensional. For 3D-NAND state-of-the-art
flash memory device, memory capacity is being expanded by stacking multiple
memory cells vertically, and multi-layering technology is advanced from the
current 64 layers structure to 96 layers or 128 layers. To control the size and
shape of memory cells in the manufacturing process, it is necessary to
precisely measure the bottom dimensions of memory holes and slits (trenches),
which have become deeper due to the increased multi-layering. For the
manufacturing of DRAM*4 and logic devices, there are requests for more accurate
alignment between upper and lower device patterns alongside the advances in
miniaturization. For this reason, high-precision fast overlay measurements at
many points across the device are becoming a necessity.

The newly-developed CV6300 Series is the world's first*5
advanced in-line measurement system that realized a 45kV acceleration voltage.
The maximum acceleration voltage of the irradiating electron beam (primary
electron beam) has been increased from 30kV in the previous CV5000 Series to
45kV, with a significant increase of the signal amount of the reflected
electrons (BSE*6) generated by the interaction of the primary electron beam and
the test sample. This allows to achieve a high-resolution high-quality imaging,
and enables highly accurate measurements of deep holes and trench bottom
dimensions. In addition, by improving the precision of adjustments and
stability of the primary electron beam, Hitachi High-Tech has achieved
precision improvement in dimensions and overlay measurements, as well as a
reduction of measurement variation among systems. Furthermore, due to the
adoption of new wafer stage and optimization of dimension measurement
sequencing*7, measurement throughput has been improved by about 25% compared to
the previous model.

Hitachi High-Tech will strive to meet customers' needs in
dimensions measurements and defect inspection for the development and mass
production of semiconductor devices by supplying electron beam based products
such as traditional CD-SEM, High voltage CV6300 Series, and wafer inspection
systems based on optical technologies. Hitachi High-Tech will continue to
provide innovative solutions for upcoming technology challenges. In parallel,
Hitachi High-Tech will contribute to cutting-edge technologies by pursuing and
creating new value in collaboration with its customers.




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