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CEA-LETI To Showcase Breakthroughs At IEDM

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Leti, a technology research institute of CEA Tech, will
present its breakthroughs on embedded memories & AI, RF, quantum computing,
and energy storage during IEDM 2019 at the Hilton San Francisco Union Square
hotel, Dec. 7-11, and will co-host a workshop with imec titled “Towards Next
Generation Computing”.

In addition, CEA-Leti, a global leader in 3D integration
technology, which includes its patented CoolCubeTM process, will present a
tutorial on sequential integration, at 4:30 p.m., Dec. 7.

The institute also will host for the first time a joint
workshop with imec. The event organized by two of the world's leading
microtechnology research organizations features an introduction by Stanford
University Prof. Subhasish Mitra, “Computing for the Coming Superstorm of
Abundant Data”. It will begin with registration at 5:30 p.m. on Dec. 8. In
addition to Mitra's presentation and brief introductions and conclusions by
imec President and CEO Luc Van den hove and Leti CEO Emmanuel Sabonnadière, the
workshop sessions are:

Artificial Intelligence

In-memory
Computing Technologies for DNN Acceleration, imec

Technological
Solutions for Improving the Figures of Merit of Edge AI, Leti

Quantum Computing

Si Spin
Qubit Challenges for Large Scale, Leti

Disruption
in Compute: Building the Quantum Computer in a 300mm Fab, imec

IEDM Conference Highlights

Conclusion followed by a reception

“The joint workshop
with CEA-Leti and imec further signals Europe's drive to leverage its
complementary microelectronics expertise and passion for innovation, and
position itself as a leader in the global pursuit of essential technologies for
the future,” said Sabonnadière. “This drive is based on our commitment to not
only create breakthroughs, but also to transfer them to Europe's industrials,
SMEs and startups, which will bring essential technologies to people around the
world.”

CEA-Leti and Partners' IEDM Papers by Research Category


Embedded Memories and AI

“Fully
Integrated Spiking Neural Network with Analog Neurons and RRAM Synapses”

14.3, 9:55 AM, Dec. 10, Continental Ballroom 5

“Demonstration
of BEOL-Compatible Ferroelectric Scaled Hf0.5Zr0.5O2 FeRAM Co-Integrated with
130nm CMOS for Embedded NVM Applications”

15.7, 12:00 PM, Dec. 10, Continental Ballroom 6

“Reliability
and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration”

35.3, 2:25 PM, Dec.11, Grand Ballroom A



RF

“RF
Performance of a Fully Integrated 3D Sequential Technology”

25.1, 2:20 PM, Dec. 10, Imperial Ballroom A

“A Very
Robust and Reliable 2.7GHz +31dBm Si RFSOI Transistor for Power Amplifier
Solutions”

25.5, 4:25 PM,
Dec.10, Imperial Ballroom A



Quantum Computing

“Gate
Reflectometry for Probing Charge and Spin States in Linear Si MOS Split-gate
Arrays”

37.7, 4:05 PM, Dec.11, Continental Ballroom 4

Energy Storage

“Millimeter
Scale Thin Film Batteries for Integrated High Energy Density Storage”

26.1, 2:20 p.m., Dec. 10, Imperial Ballroom B



Invited Papers

“Hybrid
Analog-Digital Learning with Differential RRAM Synapses”

22.6, 4:50, Dec. 10, Continental Ballroom 5

“OXRAM
for Embedded Solutions on Advanced Node: Scaling Perspectives Considering
Statistical Reliability and Design Constraints”

30.5, 10:45, Dec.11, Continental Ballroom 4

“Qubit
Read-out in Semiconductor Quantum Processors: Challenges and Perspectives”

31.6, 11:10
AM, Dec. 11, Continental Ballroom 5

Other Papers

Monday, Dec. 9

“Inter-tier
Dynamic Coupling and RF Crosstalk in 3D Sequential Integration”

3.4, 3:40 PM, Grand Ballroom B

“Investigation
of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT”

4.3, 2:25 PM, Continental Ballroom 1-3

Tuesday, Dec. 10

“Imaging,
Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transistors”

11.5, 11:10 AM, Grand Ballroom A

“A
Large-area Curved Pyroelectric Fingerprint Sensor”

26.5, 4:25 PM, Imperial Ballroom B

Wednesday, Dec. 11

“First
Demonstration of Vertical Ge0.92Sn0.08/Ge and Ge GAA Nanowire pMOSFETs with Low
SS of 66 mV/dec and Small DIBL of 35 mV/V”

29.6, 11:10 AM, Grand Ballroom B

“Novel
1T2R1T RRAM-based Ternary Content Addressable Memory for Large Scale Pattern
Recognition”

35.5, 3:15 PM, Grand Ballroom A


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