News Article
Japan Grants Key Silicon Carbide Barrier Patent to Dow Corning
Dow Corning Corporation has been granted a key patent in Japan covering the use of silicon carbide barrier films between dielectric and metal layers found in the world's most advanced semiconductor devices.
Dow Corning pioneered the use of silicon carbide barrier technology over 10 years ago, filing the original invention with the United States Patent and Trademark Office in February 1995. Silicon carbide barrier technology is essential in the production of today's leading-edge devices, which use copper dual damascene conductors and low-k dielectric insulators. A silicon carbide barrier layer prevents copper metallic species from diffusing into and contaminating neighboring dielectric film layers in the chip interconnect structure. As a result, chip manufacturers can continue building devices that are smaller and faster than proceeding generations."The issuing of the silicon carbide barrier layer patent in Japan is truly a momentous occasion, providing formal recognition of Dow Corning's innovation and continued contributions to the field of integrated circuit science," said Phil Dembowski, global marketing manager for Dow Corning's Device Fabrication Materials Business. "The patent also provides some level of protection against others who wish to practice or promote this technology without obtaining the appropriate license to do so."
