News Article
New High-k materials allow smaller, faster chips to work more efficiently
A Recent advance by Air Products has developed 45 nanometre (nm) semiconductor chips, this has been made possible through the use of high-k materials in the gate dielectric.
A Recent advance by Air Products has developed 45 nanometre (nm) semiconductor chips, this has been made possible through the use of high-k materials in the gate dielectric.
Air Products produces and markets a variety of high-k precursors which are used to deposit defect-free gate dielectrics through chemical vapour deposition or atomic layer deposition. The use of high-k dielectrics in conjunction with metal gates improves semiconductor performance and meets consumer demand for smaller, faster devices with longer battery lifetimes. Use of these chips will allow electronic devices to operate at even quicker speeds, while using considerably less power.
Previously, the semiconductor industry had used silicon dioxide to build transistor gate dielectrics. However, as the industry continues the drive to smaller chip geometries, gate dielectric thickness has decreased dramatically. This has led to an increase in gate oxide leakage, a major technical hurdle facing the semiconductor industry. high-k materials combat the leakage issue, while at the same time preserve the capacitance necessary for transistor performance.
"Air Products' high-k material portfolio responds to our customer needs," said Corning Painter, vice president, Electronics, for Air Products. "We have worked for almost a decade in collaboration with our leading customers and major equipment manufacturers to ensure that our materials and delivery solutions are production-ready."
Air Products produces and markets a variety of high-k precursors which are used to deposit defect-free gate dielectrics through chemical vapour deposition or atomic layer deposition. The use of high-k dielectrics in conjunction with metal gates improves semiconductor performance and meets consumer demand for smaller, faster devices with longer battery lifetimes. Use of these chips will allow electronic devices to operate at even quicker speeds, while using considerably less power.
Previously, the semiconductor industry had used silicon dioxide to build transistor gate dielectrics. However, as the industry continues the drive to smaller chip geometries, gate dielectric thickness has decreased dramatically. This has led to an increase in gate oxide leakage, a major technical hurdle facing the semiconductor industry. high-k materials combat the leakage issue, while at the same time preserve the capacitance necessary for transistor performance.
"Air Products' high-k material portfolio responds to our customer needs," said Corning Painter, vice president, Electronics, for Air Products. "We have worked for almost a decade in collaboration with our leading customers and major equipment manufacturers to ensure that our materials and delivery solutions are production-ready."
