News Article
Company receives low-k dielectric patent for inorganic/organic films
Aviza Technology has announced that it has been awarded U.S. Patent No. 7,153,580 entitled "Low-k Dielectric Inorganic/Organic Hybrid Films and Method of Making" for organosilicon-based silicon-organic-carbon (SiOC) films targeted at intermetal dielectric films containing very low dielectric constant values. The patent was issued in December 2006.
Aviza Technology has announced that it has been awarded U.S. Patent No. 7,153,580 entitled "Low-k Dielectric Inorganic/Organic Hybrid Films and Method of Making" for organosilicon-based silicon-organic-carbon (SiOC) films targeted at intermetal dielectric films containing very low dielectric constant values. The patent was issued in December 2006. "Aviza has a deep portfolio of IP that spans multiple technologies," said Nitin Shah, Vice President of Business Development of Aviza Technology, "We believe that the addition of this latest low-k patent, along with previously issued patents in this area, enhances our overall IP portfolio." This new patent covers dielectric films for structures comprised substantially of cyclic Si-O-Si groups and chains as well as organic side groups attached to the structures. The films may be formed in thermal- or plasma-based systems, which utilize organosilicon precursors.
