News Article
Researchers produce high performance field-effect transistors with thin films of Carbon 60
Using room-temperature processing, researchers at the Georgia Institute of Technology have fabricated high-performance field effect transistors with thin films of Carbon 60, also known as fullerene.
The ability to produce devices with such performance with an organic semiconductor represents another milestone toward practical applications for large area, low-cost electronic circuits on flexible organic substrates.
The new devices have electron-mobility values higher than amorphous silicon, low threshold voltages, large on-off ratios and high operational stability. These could encourage more designers to begin working on such circuitry for displays, active electronic billboards, RFID tags and other applications that use flexible substrates.
"If you open a textbook and look at what a thin-film transistor should do, we are pretty close now," said Bernard Kippelen, a professor in Georgia Tech's School of Electrical and Computer Engineering and the Center for Organic Photonics and Electronics. "Now that we have shown single transistors, we want to demonstrate functional devices that are combinations of multiple components. We have everything ready to do that."
