RASIRC Releases Report on Hydrogen Peroxide Gas Delivery for ALD, Annealing and Cleaning
In the Peroxidizer, a hydrogen peroxide liquid pervaporates across a membrane. This enables generation of a stable and high concentration of H2O2 gas with minimal susceptibility to downstream process conditions. The Peroxidizer only needs standard semiconductor grade liquid H2O2 to support a wide range of process and H2O2 delivery conditions.
"Hydrogen peroxide gas is a powerful and versatile oxidant for processing new materials needed for fabrication of 3D structures," said Jeff Spiegelman, RASIRC President and Founder. "The Peroxidizer is the first new breakthrough in process oxidants since the ozone generator. We are just starting to understand its value for next generation semiconductor manufacturing."
Chemicals used today for thin film oxidation do not meet future manufacturing challenges. In one way or another, traditional oxidants, including water, ozone and O2 plasma, are deficient when fabricating these new device structures under atomic level constraints.
"New thin film layers are no longer planar, but are three dimensional shapes with very high aspect ratios (150:1). This creates inverted skyscrapers on an atomic layer," said Spiegelman. "Processing at the bottom of these deep structures is nearly impossible. Chemicals must be stable enough to reach the bottom then react when the oxidant gets to the target site. This precludes the use of plasma."
Semiconductor processes affected include atomic layer deposition, annealing, wafer cleaning, thermal oxidation, thin film growth, etching, and interface layer passivation.
The Peroxidizer delivers hydrogen peroxide gas in stable, high concentrations from 12,500 to 50,000 ppm, which equates to 1.25 to 5% gas by volume. The system handles gas flows of 5 to 30 slm in vacuum or atmospheric conditions.
Download the report "Hydrogen Peroxide Gas Delivery for Atomic Layer Deposition, Annealing, and Surface Cleaning in Semiconductor Processing".
