Infineon Technologies’ researchers will be presenting a range of new technologies at the International Solid-State Circuits Conference (ISSCC 2004) this week. These presentations consist of papers on DNA sensor chips, RFID circuits/packaging and an analogue digital converter (ADC) built on a 90nm process, along with four separate papers on high-speed communications circuits.
IBM has used a combination of silicon-on-insulator (SOI), strained silicon and copper wiring technologies to manufacture low power, high performance microprocessors. The integration of the three leading edge techniques is claimed as an industry first.
Sony and Toshiba are to collaborate in the development of 45nm process and design technologies for next-generation system large-scale integration (LSI). This extends the companies’ successful development of 65nm process technologies to the next level. Positive 45nm results are expected in 2005.
All of STMicroelectronics’ relevant manufacturing sites have achieved certification to the occupational health and safety management system OHSAS 18001 specification. ST reports that it is the first global semiconductor manufacturer in the world to achieve this.
Micron Technology has introduced three new CMOS image sensor including a 1.3Mpixel device. The MT9M011 1.3Mpixel image sensor is the company's first megapixel sensor designed specifically for the mid- to high-end mobile market such as smart and 3G phones.
Sumitomo Chemical and Cambridge Display Technology (CDT) agreed joint development of high efficiency polymer organic light-emitting diode (OLED/PLED) display materials. The agreement is for co-operation in the development and scale-up of a range of solution processable, PLED materials, designed for use primarily in the manufacture of flat panel displays.
Infineon Technologies plans to expand its Memory Development centre at its Dresden location in Germany. The company wants to strengthen and extend development of 300mm process technology, particularly for DRAM and Flash products.
Oxford University’s Isis technology commercialisation body is seeking interested parties in a simple technique for separating high value semiconducting carbon nanotubes from mixed samples of single- and multi-walled carbon nanotubes.
STMicroelectronics has been granted ISO/TS16949:2002 certification for all of its sites, including non-manufacturing sites. The certification covers both the ISO9001:2000 standard and the new TS16949:2002 standard that applies the much more demanding quality criteria of the automotive industry.
Micronic Laser Systems has decided to discontinue the Sigma7100, which will be replaced by Sigma7300. The Sigma7000 series uses an array of micromirrors to produce images in parallel, promising higher throughput. The mirror system was developed with the Fraunhofer Institute for Microelectronic Circuits and Systems (IMS).
Capricorn Venture Partners is to collaborate with IMEC to support spin-off initiatives from the European microelectronics research centre with start-up and seed capital. As part of the agreement, Capricorn Venture Partners has been mandated to raise funds for IMEC’s ITF seed capital fund.
Scientists at Philips Research claim a significant step towards perfecting new micro electro-mechanical system (MEMS) devices that will significantly enhance the performance and minimise the size of RF circuits in mobile phones. The new MEMS devices are the microscopic equivalent of air-spaced variable/switchable capacitors and can be integrated into silicon chips using conventional wafer fabrication processes.
Unitive has selected SUSS lithography equipment and SupraYield technology to develop next-generation packaging processes. The SupraYield installation and process development will take place at Unitive's facility in Research Triangle Park, North Carolina.
Japan’s Nippon Telegraph and Telephone (NTT) has created an electron beam (EB) lithography system that enables the fabrication of nanometre-scale three-dimensional (3D) structures. NTT demonstrated the 3D nanopatterning and nanofabrication by exposing a small sphere to the EB to form the world's smallest globe. A 3D nano-filter has also been produced on the system.
Soitec’s Picogiga International division introduced a family of aluminium gallium nitride (AlGaN)/gallium nitride (GaN) epitaxial layers on silicon substrates aimed at high-power high-electron-mobility transistors (HEMTs). These devices are used in wireless-infrastructure and other high-speed applications. Picogiga uses a molecular beam epitaxy (MBE) process to create the substrates.
Lithography industry representatives selected 193nm immersion as the most likely candidate to meet the needs of leading-edge semiconductor manufacturing in the period 2007-2009 at a two-day Lithography Forum sponsored by International SEMATECH (ISMT).
ASML, Canon, and Nikon are all designing and planning to ship commercial immersion lithography tools between late 2004 and 2006, according to presentations made at the latest International Sematech (ISMT) workshop on the technology. ASML and Nikon both say they will develop 193nm immersion systems at 0.85 numerical aperture (NA) by Q3 2004. Canon says it plans to build a 193nm tool with an NA greater than 1.0 by early 2006.
Wacker-Chemie is preparing an initial public offering (IPO) of shares in its silicon wafer unit, Wacker Siltronic, according to an interview with the company’s CEO Dr Peter-Alexander Wacker in the Frankfuerter Allgemeine Zeitung.
OpTIC Technium is to help researchers from University College London (UCL) and Cranfield University in developing and commercialising ultra precision surface production technology. The aim is for production of surfaces with ten times the accuracy and with ten times greater speed than current state of the art.