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Tuesday 27th February 2018
TU Wien has developed a sensor for measuring the strength of electric fields, which is smaller, simpler and less prone to distortion than comparable devices.Picture: Tiny new sensor - compared to a one-cent-coin
Monday 26th February 2018
Image: EUV single patterning of (left) the N5 32nm metal-2 layer, (middle) 32nm pitch dense lines, and (right) 40nm hexagonal contact holes and pillars
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Monday 26th February 2018
Qualcomm anticipates that its future Snapdragon 5G mobile chipsets will use Samsung’s 7nm LPP EUV process technology
Monday 26th February 2018
Pilot line for laser-thinning advanced SiC, GaN, and sapphire wafers already processing customer substrates
Monday 26th February 2018
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Wednesday 21st February 2018
iTest Uses Advantest to evaluate semiconductors from Silicon Valley chip makers
Wednesday 21st February 2018
Friday 16th February 2018
UA Scientists have tracked electrons moving through exotic materials that may make up the next generation of computing hardware, revealing intriguing properties not found in conventional, silicon-based semiconductors.
Thursday 15th February 2018
Live demonstrations will cover applications in computing, communications, and automotive
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Wednesday 14th February 2018
Special-purpose chip reduces power consumption of public-key encryption by 99.75 percent, increases speed 500-fold.
Friday 9th February 2018
Thursday 8th February 2018
Thursday 8th February 2018
Handles homogeneous and heterogeneous chip integration with high-density packaging to enhance the efficiency of chip and passive design optimization
Thursday 8th February 2018
Above a false-color, plan-view SEM image of a lateral gallium oxide field effect transistor with an optically defined gate. From near (bottom) to far (top): the source, gate, and drain electrodes. Metal is shown in yellow and orange, dark blue represents dielectric material, and lighter blue denotes the gallium oxide substrate. Credit: AFRL Sensors Directorate at WPAFB, Ohio, US

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