Resonac launches R&D Centre
Resonac Corporation has inaugurated a new R&D center to mark the full-scale launch of “US-JOINT,” a consortium of 12 Japanese and U.S. material and equipment manufacturers led by the company, with the goal of establishing new models for developing next-generation semiconductor-packaging technologies. To commemorate the occasion, a ceremony attended by government officials and participating companies from both countries was held at the consortium's newly operational base in Silicon Valley on April 20.
The new R&D center is the first in the United States dedicated to developing advanced semiconductor-packaging technologies. Resonac and the consortium partners will leverage this R&D base in Silicon Valley to validate new concepts in collaboration with major users of advanced semiconductors. By capturing market needs in real time and combining the technological capabilities of leading Japanese and U.S. manufacturers of materials and equipment, the consortium will accelerate the research and development of materials, evaluation and packaging technologies to enable the rapid commercialization and deployment.
Hidehito Takahashi, President and CEO of Resonac, commented: "US-JOINT aims to shorten the proof-of-concept (PoC) period from approximately six months to as little as one month by enabling 12 participating Japanese and U.S. companies to conduct development in Silicon Valley, home to major hyperscalers. Through “collaboration” between semiconductor-related companies from Japan and the United States, the initiative will accelerate global semiconductor innovation."
Resonac will leverage US-JOINT's technological foundation and knowledge to play a central role in promoting co-creation while overseeing the consortium. As a materials manufacturer with a comprehensive understanding of the entire semiconductor manufacturing process, Resonac will bring together the technologies and ideas of participating companies to contribute to concept validation and accelerate co-creation targeted at market needs.
