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China R&D Takes UK MOCVD

The Institute of Semiconductor Chinese Academy of Science (ISCAS) in Beijing has expanded its R&D capability by installing an R&D Closed Coupled Showerhead (CCS) MOCVD reactor provided by Thomas Swan Scientific Equipment (TSSE).
The Institute of Semiconductor Chinese Academy of Science (ISCAS) in Beijing has expanded its R&D capability by installing an R&D Closed Coupled Showerhead (CCS) MOCVD reactor provided by Thomas Swan Scientific Equipment (TSSE).


The 3x50mm GaN on sapphire and 1x100mm GaN on silicon MOCVD reactor will be used primarily for the development of short-wavelength laser diodes and UV photo-detector devices.


The ISCAS group has succeeded in fabricating one of the first cubic-phase GaN light emitting diodes in the world. After successfully transferring blue-LED technology to a production environment at Shenzhen Fangda, the centre has focused its efforts on short-wavelength laser diodes, UV detectors, high efficiency LEDs and magnetic semiconductors.


ISCAS and TSSE have also signed a co-operation agreement for leading edge process development of GaN based materials. This development will focus on the growth of GaN based laser diodes and the use of TSSEs in-situ monitoring technology.



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