Toshiba has developed a family of power MOSFETS using its new “Ultra High Speed U-MOS III” (UHS U-MOS III) technology. The process represents the company’s first use of aluminum strap (Al-strap) connections to improve typical on-resistance (RDSon) by 34% at a Vgs of 4.5V and reduce gate charge (QSW) by 14% compared to U-MOS III with standard wire bond technology. The family of UHS U-MOS III with Al-strap MOSFETs is targeted for synchronous rectification applications in DC-to-DC converters and in power supplies for desktop and mobile computers, servers, networking and telecom equipment.

Toshiba has developed a family of power MOSFETS using its new “Ultra High Speed U-MOS III” (UHS U-MOS III) technology. The process represents the company's first use of aluminum strap (Al-strap) connections to improve typical on-resistance (RDSon) by 34% at a Vgs of 4.5V and reduce gate charge (QSW) by 14% compared to U-MOS III with standard wire bond technology. The family of UHS U-MOS III with Al-strap MOSFETs is targeted for synchronous rectification applications in DC-to-DC converters and in power supplies for desktop and mobile computers, servers, networking and telecom equipment.
The Al-strap is a proprietary bonding technique that conforms to a standard 8-pin (SOP-8) package. It incorporates aluminium connections - the “straps” - between the chip and the terminal in order to reduce the conduction resistance in the package compared with traditional bonding wires. Al-strap bonding is achieved via an ultra-sonic method instead of solder.
The fast switching UHS U-MOS III process was introduced at Toshiba in January 2003. The process uses a trench cell structure MOSFET.
Four Al-strap MOSFETs are available now in SPO8 packaging.

AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.

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