MMICs On 150mm GaAs Wafers
"Facilities will be available on the MESFET process at the end of the year followed in the first quarter of 2004 by the pHEMT process," says Ray Taylor, Business Manager, RF MMICS & Foundry Products. "Currently, we have produced wafers for both MESFET and pHEMT, and they are running through qualification and characterisation. The move to 6-inch wafers is a major step that will affect the cost base of all of our products in future, as well as the foundry services we offer."
The F20 MESFET process results in 0.5micron gate-length devices for use up to 20GHz. Both the gain and switch processes have been qualified for European Space Agency (ESA) use. The H40 and H40P (high-power variant) processes use 0.2micron gate-length low-noise pHEMT technology for devices operating to over 40GHz. the H40P has a breakdown voltage of more than 15V. A new 0.12micron pHEMT process is being developed for applications at even higher frequencies up to 80GHz.
The processes use direct step on wafer lithography. There is an option for multi-project runs, whereby several clients can share fractional space on a single wafer.

AngelTech Live III: Join us on 12 April 2021!
AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!
Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.
We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.
We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.
Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.
Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.
So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.
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