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MMICs On 150mm GaAs Wafers

Bookham Technology says it is launching the first European-based commercial processes to use 150mm wafer technology for producing GaAs monolithic microwave ICs (MMICs). Only a handful of foundries world-wide have this capability. Initial production will start in late 2003. The new 150mm wafer process will increase per-wafer device volumes by up to a factor of four.
Bookham Technology says it is launching the first European-based commercial processes to use 150mm wafer technology for producing GaAs monolithic microwave ICs (MMICs). Only a handful of foundries world-wide have this capability. Initial production will start in late 2003. The new 150mm wafer process will increase per-wafer device volumes by up to a factor of four.


"Facilities will be available on the MESFET process at the end of the year followed in the first quarter of 2004 by the pHEMT process," says Ray Taylor, Business Manager, RF MMICS & Foundry Products. "Currently, we have produced wafers for both MESFET and pHEMT, and they are running through qualification and characterisation. The move to 6-inch wafers is a major step that will affect the cost base of all of our products in future, as well as the foundry services we offer."


The F20 MESFET process results in 0.5micron gate-length devices for use up to 20GHz. Both the gain and switch processes have been qualified for European Space Agency (ESA) use. The H40 and H40P (high-power variant) processes use 0.2micron gate-length low-noise pHEMT technology for devices operating to over 40GHz. the H40P has a breakdown voltage of more than 15V. A new 0.12micron pHEMT process is being developed for applications at even higher frequencies up to 80GHz.


The processes use direct step on wafer lithography. There is an option for multi-project runs, whereby several clients can share fractional space on a single wafer.



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