Vitesse Partners To Develop InP
Indium phosphide allows direct digital synthesis of high-frequency signals, thereby simplifying the system design and reducing the number of discrete components required in advanced satellite, aircraft and terrestrial communication systems.
The VIP-2 process is similar to Vitesse's VIP-1, currently in production, in that it uses 100mm diameter semi-insulating substrates and is designed for high-performance and high yield. A key difference between the VIP-1 process and VIP-2 is the bipolar transistor structure. VIP-2 makes use of double HBTs (DHBT), with an fT of 300GHz and an fMAX of 300GHz. These figures are twice those of VIP-1 transistors. The VIP-2 process has four layers of metal interconnect and includes resistors and capacitors. It provides circuit designers the benefits of both high-speed and high-voltage operation suitable for digital, analogue, and RF circuits at 10GHz and higher.
Vitesse will collaborate with BAE Systems on the design of the communications circuits. The initial circuits are for direct digital frequency synthesis (DDFS) for electronic warfare and radar applications. UIUC will focus on research for the next-generation transistor structures meant to further extend circuit performance and applications. A factor of two improvements in critical performance parameters has already been attained in early VIP-2 experiments at 0.45microns. Further scaling is planned, by incorporating UIUC's findings, with the ultimate goal of shrinking device geometry to 0.25microns. This will result in static flip-flop toggle frequencies of 150GHz. The initial 18-month contract contains option phases, which, if implemented, would bring the total value of the contract to more than $15mn.
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