Compound Semiconductor
The company's Munich research labs has fabricated
carbon-doped silicon germanium (SiGe:C) bipolar ICs that reach an operating
frequency of more than 110GHz with minimum power consumption. By way of
comparison, silicon-based processors in CMOS used in PCs run with top speeds
of less than 4GHz. The millimetre-wave frequencies achieved by the Infineon
researchers were previously only possible with components made from gallium
arsenide.
Devices and products benefiting from these research results in the short
term will be high-speed discrete components (transistors and diodes), 40
Gbit/sec low-power wireline communication systems, high speed microwave
radio links, ultra wide-band communication systems up to 60GHz and
automotive radar systems at 77GHz.
Cut-off frequencies are more than 200GHz. A ring oscillator built on the
process has a gate delay time of 3.7psecs. Tests of the high performance
circuits indicate well-balanced transistor parameters for analogue and
digital applications and very low noise figures.
Three record setting ICs were produced: a 110GHz+ ratio-2 dynamic frequency
divider, a 86GHz ratio-32 static frequency divider, and a 95GHz voltage
controlled oscillator (VCO). Infineon also demonstrated that an integrated
77GHz automotive radar transceiver in SiGe, based on these building blocks,
is now feasible.
The dynamic frequency divider circuit operates with a 5V supply voltage and
a current consumption of 62mA. The static frequency divider circuit works
with a 5V supply voltage and consumes only 180mA.
The VCO has a phase noise of only -97dBc/Hz at 1MHz carrier offset
frequency. The output power is -6dBm. At 5V supply voltage the circuit shows
a very low current consumption of 12mA.
Depending on the type of circuit used, the high-frequency chips produced by
Infineon are 10-30% faster than similar circuits fabricated by other
manufacturers, its is said.
The primary applications are in high-speed communications systems, where
higher transmission frequencies allow more data to be transferred in less
time. The likely applications include transmitters and receivers in
microwave radio links and high-speed communication between electronic
equipment and computers (wireless LAN).
Cars present a broad spectrum of possible applications for these high-speed
chips - for example, radar-based proximity and collision warning systems.
The University of California Santa Barbara (UCSB) will transfer molecular
beam epitaxy (MBE) growth processes for wireless and optical telecoms
devices to Veeco Instruments' new epitaxial Process Integration Center
(PIC).
UCSB will demonstrate the growth processes and provide Veeco PIC scientists
with the recipes required to grow non-proprietary device structures for
carbon-doped InP heterojunction bipolar transistors (HBTs), metamorphic HBTs
(InAlGaAs), 980nm edge-emitting lasers, InP/InAlGaAsP 1.5mm edge-emitting
lasers and 980nm vertical cavity surface emitting lasers (VCSELs).
Dr Hwa Cheng, Director of the PIC, reports: "These processes were developed
at UCSB on our single-wafer GEN II R&D systems, and this agreement will let
us duplicate them on the PIC's multi-wafer GEN200 production systems."
NEC Compound Semiconductor Devices has launched new silicon germanium (SiGe)
bipolar transistors, the NESG3031M05 and NESG3031M14. The devices were
developed on the company's next-generation silicon germanium heterojunction
bipolar transistor semiconductor UHS3 process technology. The company is
claiming top-level high-frequency (5.2GHz) low-noise features (0.95dB).
Compared with the previous generation devices for 5.2GHz wireless
communication, the noise factor has improved by 27%. The company is aiming
at markets using high-frequency low-noise amplifiers for wireless devices
such as wireless LAN, cordless telephones and Electronic Toll Collection
(ETC) units.
Silicon germanium devices offer cost advantages over typical gallium
arsenide transistors (GaAs). SiGe products can cost half the price of GaAs
devices with the same performance.
Sample shipment is scheduled to start from early August 2003 for the
NESG3031M05, and early September for the NESG3031M14. Move to mass
production is slated for October at an initial production capacity of 1mn
units per month, rising to 10mn by March 2004.
AngelTech Live III: Join us on 12 April 2021!
AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!
Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.
We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.
We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.
Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.
Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.
So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.
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