Plasma Enhanced Wafer Bonding
Traditionally, direct wafer bonding (DWB) requires a high temperature anneal at 1000C after the wafers are joined together in order to increase the interface bond strength. These high temperatures limit the types of materials that can be joined and the point in the processing when they can be joined. For applications using fully processed wafers such as CMOS and MEMS devices the maximum allowable temperature is less than 400C.
"The application of atmospheric pressure plasma is a new idea for the surface activation of semiconductor materials", says Dr Franz Richter, CEO of SUSS MicroTec. "Testing shows that this technology significantly reduces direct wafer bonding process temperatures. It can be accomplished with extremely high throughput without the financial burden of expensive vacuum systems. It completely changes the cost of ownership model for these applications."
The patent pending method of surface activation and subsequent bonding was developed in co-operation with MPI Halle and Fraunhofer IST, Braunschweig, Germany.
The technology is available as an optional process module on SUSS' modular 300mm production system for direct wafer bonding (SOI300) or as a standalone module.
AngelTech Live III: Join us on 12 April 2021!
AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!
Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.
We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.
We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.
Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.
Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.
So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.
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