Honeywell Licenses Magnetic Memory For SOI
Honeywell plans to develop radiation-hardened MRAM non-volatile memory for military and aerospace products such as satellites where data processing and storage performance is critical. MRAM memory elements will be integrated into Honeywell's radiation-hardened silicon-on-insulator (SOI) technology.
Honeywell and Motorola collaborated with the US Defense Advanced Research Project Agency (DARPA) in the initial research and development of MRAM.
Currently, electronic memory is sensitive to bursts of high or low amounts of radiation that interrupt power, requiring auxiliary systems to prevent data corruption and loss. By contrast, MRAM stores data through a magnetic cell structure rather than through transistor cells, eliminating the need for the auxiliary systems that add weight, require storage and often are less reliable. MRAM also offers speed, memory ability and the integration of multiple memory-options on the same chip.
SOI is currently used on Honeywell's radiation-hardened RAM and application specific integrated circuit components for space and in operating environments where radiation exposure may cause memory failure.
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