High temperature relay permits denser board designs
Omron Electronic Components Europe has launched the G3VM S-VSON(L) MOS FET relay, designed for use in semiconductor test equipment, communication equipment, and test and measurement equipment.
The relay is capable of operating at ambient temperatures of up to 125˚C, improving on previous iterations which were limited to ambient temperatures of 110˚C. As a MOS FET relay, the device is voltage-driven, removing the need for input side resistor selection, while freeing up additional board space.
As applications become smaller and more complex, designers must attempt to fit more components onto each board. However, each electronic component generates heat in operation, which can compromise efficiency and reliability. The G3VM relays improved temperature performance permits the design of more densely packed boards. In practice, for testing applications this can allow more tests to be carried out simultaneously, and in a shorter amount of time.
The temperature performance also facilitates smaller application designs, as the G3VM can withstand higher amounts of heat dissipation without losing efficiency. The relay weighs just 0.1 g, and measures 2.0 mm (L) x 1.45 mm (D) x 1.3 mm (H). The G3VM S-VSON(L) is available in four variants with input forward currents ranging from 0.54 mA up to 6.6 mA, and continuous load current ranging from 0.4 A to 1.5 A.
