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Process Development

Infineon Technologies and Micron Technology have released the complete specification for their reduced latency DRAM II (RLDRAM II) architecture. Infineon and Micron co-developed the RLDRAM architecture to ensure standardisation, multi-sourcing, and functional compatibility.
Infineon Technologies and Micron Technology have released the complete
specification for their reduced latency DRAM II (RLDRAM II) architecture.
Infineon and Micron co-developed the RLDRAM architecture to ensure
standardisation, multi-sourcing, and functional compatibility.
RLDRAM II products will operate at speeds of up to 400MHz. The devices will
be the second-generation for the companies ultra high-speed double data
rate (DDR) SDRAM combining fast random access with extremely high bandwidth
and high density. Target applications are communications up to 40Gbits/sec
and data storage applications. Datasheets for the 288Mbit RLDRAM II devices
are now available.
The RLDRAM II boasts a low latency and random cycle time (tRC) of 20ns
providing a higher data throughput. Additional advantages of the RLDRAM II
feature set include; on-die termination (ODT), multiplexed or
non-multiplexed addressing, on-chip delay lock loop (DLL), common or
separate I/O and programmable output impedance and a power efficient 1.8V
core.
The devices are available in a standard 144-ball FBGA, 11x18.5mm packages.


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VIEW SESSIONS
Tescan And 3D-Micromac Collaborate To Increase The Efficiency Of Failure Analysis Workflows
EV Group Establishes State-of-the-art Customer Training Facility
Siemens And ASE Enable Next-generation High Density Advanced Package Designs
Cadence Announces $5M Endowment To Advance Research
South Korean Point Engineering Chooses ClassOne’s Solstice S8 For Advanced Semiconductor Plating
K-Space Offers A New Accessory For Their In Situ Metrology Tools
Panasonic Microelectronics Web Seminar
Onto Innovation Announces New Inspection Platform
AP&S Expands Management At Beginning Of 2021
Imec Demonstrates 20nm Pitch Line/Space Resist Imaging With High-NA EUV Interference Lithography
New Plant To Manufacture Graphene Electronics
Tower Semiconductor Announced Program Creating An Integrated-Laser-on-Silicon Photonics Foundry Process
Obducat Receives Order For Fully Automated Resist Processing Tool From A Customer In Asia
ITRI And DuPont Inaugurate Semiconductor Materials Lab
Changes In The Management Board Of 3D-Micromac AG
ASML Reports €14.0 Billion Net Sales
U.S. Department Of Defense Partners With GLOBALFOUNDRIES To Manufacture Secure Chips At Fab 8
Belgian Initiative For AI Lung Scan Analysis In Fight Against COVID-19 Goes European
Can New Advances In CMOS Replace SCMOS Sensors In Biomedical Applications?
Will Future Soldiers Be Made Of Semiconductor?
DISCO's Completion Of New Building At Nagano Works Chino Plant
GOODFELLOW Confirms Membership In The BSI UK Graphene Group
SUSS MicroTec Opens New Production Facility In Taiwan
TEL Introduces Episode UL As The Next Generation Etch Platform

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