Infineon Technologies and Micron Technology have released the complete specification for their reduced latency DRAM II (RLDRAM II) architecture. Infineon and Micron co-developed the RLDRAM architecture to ensure standardisation, multi-sourcing, and functional compatibility.

Infineon Technologies and Micron Technology have released the complete
specification for their reduced latency DRAM II (RLDRAM II) architecture.
Infineon and Micron co-developed the RLDRAM architecture to ensure
standardisation, multi-sourcing, and functional compatibility.
RLDRAM II products will operate at speeds of up to 400MHz. The devices will
be the second-generation for the companies ultra high-speed double data
rate (DDR) SDRAM combining fast random access with extremely high bandwidth
and high density. Target applications are communications up to 40Gbits/sec
and data storage applications. Datasheets for the 288Mbit RLDRAM II devices
are now available.
The RLDRAM II boasts a low latency and random cycle time (tRC) of 20ns
providing a higher data throughput. Additional advantages of the RLDRAM II
feature set include; on-die termination (ODT), multiplexed or
non-multiplexed addressing, on-chip delay lock loop (DLL), common or
separate I/O and programmable output impedance and a power efficient 1.8V
core.
The devices are available in a standard 144-ball FBGA, 11x18.5mm packages.

AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.

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