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Researchers from Yale University have used to arsenic antisites in gallium arsenide (GaAs) to produce optical transitions in the 1.5micron optical communications band (Nature Materials, advanced on-line publication, May 4, 2003). GaAs normally produces light around 0.85microns, which is not optimal for transmission in optical fibres. This has pushed the industry to use the more expensive indium phosphide based devices.
Researchers from Yale University have used to arsenic antisites in gallium
arsenide (GaAs) to produce optical transitions in the 1.5micron optical
communications band (Nature Materials, advanced on-line publication, May 4,
2003). GaAs normally produces light around 0.85microns, which is not optimal
for transmission in optical fibres. This has pushed the industry to use the
more expensive indium phosphide based devices.
An arsenic antisite is an arsenic atom placed where the gallium normally
resides in the GaAs crystal structure. The devices were produced using
molecular beam epitaxy (MBE) of low temperature grown GaAs. More than
1E20/cm3 antisites can be produced.
The team presents results showing internal optical powers of 24mW and
terahertz speeds. The scientists also present theoretical work on the
ultimate limit for the efficiency-bandwidth product of the semiconductor
deep-level emitters.


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