Researchers from Yale University have used to arsenic antisites in gallium arsenide (GaAs) to produce optical transitions in the 1.5micron optical communications band (Nature Materials, advanced on-line publication, May 4, 2003). GaAs normally produces light around 0.85microns, which is not optimal for transmission in optical fibres. This has pushed the industry to use the more expensive indium phosphide based devices.

Researchers from Yale University have used to arsenic antisites in gallium
arsenide (GaAs) to produce optical transitions in the 1.5micron optical
communications band (Nature Materials, advanced on-line publication, May 4,
2003). GaAs normally produces light around 0.85microns, which is not optimal
for transmission in optical fibres. This has pushed the industry to use the
more expensive indium phosphide based devices.
An arsenic antisite is an arsenic atom placed where the gallium normally
resides in the GaAs crystal structure. The devices were produced using
molecular beam epitaxy (MBE) of low temperature grown GaAs. More than
1E20/cm3 antisites can be produced.
The team presents results showing internal optical powers of 24mW and
terahertz speeds. The scientists also present theoretical work on the
ultimate limit for the efficiency-bandwidth product of the semiconductor
deep-level emitters.

AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.

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