Infineon/IBM Look To Magnetic RAM Commercialisation In 2005

The MRAM core is fabricated with a 0.18micron logic-based process technology, claimed as the smallest size reported to date for MRAM technology. The MRAM memory cell measures 1.4microns2.
MRAM technology promises significant improvements by storing more information, accessing it faster and using less battery power than electronic memory. The aim is the storage capacity and low-cost of dynamic RAM (DRAM), the high speed of static RAM (SRAM) and the non-volatility of Flash memory.
Dr Wilhelm Beinvogl, chief technology officer (CTO) of Infineon's Memory Product division, comments: "Nonvolatile memory technologies like MRAM will play a major role in technology lifestyle solutions and we want to be the number one semiconductor company in this area by having a product demonstrator jointly developed with IBM available early 2004. Together with Altis Semiconductor, a joint venture of IBM and Infineon, we will pave the way for production readiness of MRAM as early as 2005."
IBM Research pioneered the development of tiny, thin-film magnetic structures as early as 1974. In the late 1980s, IBM scientists made a string of key discoveries about the giant magneto-resistive (GMR) effect in thin-film structures. These developments enabled IBM to create the first super-sensitive GMR read/write heads for hard-disk drives, stimulating dramatic increases in data density. Altering many of the GMR materials enabled IBM scientists to make the magnetic tunnel junctions that are at the heart of MRAM. In November 2000, IBM and Infineon established the joint MRAM development programme.

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