Infineon Technologies and Clariant’s AZ Electronic Materials business have signed an agreement to jointly develop photoresists for 157nm lithography. The goal is to accelerate qualification of this technology for volume production.

Infineon Technologies and Clariant's AZ Electronic Materials business have signed an agreement to jointly develop photoresists for 157nm lithography. The goal is to accelerate qualification of this technology for volume production.

The photoresist materials to be developed in this project will specifically enable Infineon to qualify the 157nm technology for producing 55nm structures in DRAM (dynamic random access memory) semiconductor chip production. Infineon will have one of the earliest exposure tools available for 157nm pilot production.

The International Technology Roadmap for Semiconductors (ITRS) predicts that 55nm structures will be in volume production beginning in 2007. One of the mainstream candidate technologies for achieving these dimensions is 157nm lithography, a technology that uses fluorine molecular lasers emitting at the vacuum ultraviolet wavelength of 157nm. However, Intel has recently indicated that it will not use the technology, opting instead to extend 193nm and transition to extreme ultraviolet (EUV) at wavelengths of the order 13.5nm.

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