News Article
ST Develops 90nm NOR Flash
STMicroelectronics claims the world’s smallest NOR Flash memory cell built on a 90nm process. The memory is designed for low voltage and high performance applications.
STMicroelectronics claims the world's smallest NOR Flash memory cell built on a 90nm process. The memory is designed for low voltage and high performance applications.
ST's latest NOR Flash memory cell occupies a silicon area of only 0.08micron2, a 50% size reduction from the current 130nm generation. ST says it is the first leading supplier to report success in producing NOR Flash memories at 90nm.
The new technology has been proven on a multi-Mbit demonstrator chip that showed full functionality of entire memory array sectors. In addition, 128Mbit prototype Flash devices were also included on the same development wafers and are now under evaluation.
The 90nm technology is expected to enter volume production in 2004. ST's Centre of Excellence for Non Volatile Memories in Agrate, Italy, developed the process.

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