Doing The Splits With InGaN
The company sees application as vehicle headlight LEDs. The ThinGaN technology makes it possible to extract up to 75% of the internally generated light from the chip.
Series production for OSRAM Opto Semiconductors blue thin-film LEDs is expected to start in 2004.
OSRAM Opto Semiconductors has tailored the epitaxial deposition of InGaN specifically to sapphire (Al2O3). More importantly, OSRAM Opto Semiconductors has developed a method for removal of the sapphire substrate in what is claimed as the world's first production-scale laser lift-off plant. In this process the light from a pulsed UV laser splits up the semiconductor material into its components. The InGaN is thus cleanly separated from the sapphire substrate.
Other key factors for the exceptionally high efficiency of the ThinGaN LEDs are the optimised surface roughness, low optical losses in the LED itself and mirror metallisation as a reflector tailored to this material combination. Prototypes of 5mm-radial LEDs achieve brightness values of up to 16mW for the blue products (460nm) at an operating current of 20mA.
Silicon carbide (SiC) is the standard substrate material for blue LEDs based on InGaN. Typical SiC substrate thicknesses are 250microns. Chemically and mechanically this material is very stable. This very feature means that the SiC cannot be completely separated from the InGaN by either a wet chemical or dry plasma process without also destroying the 5micron thin epitaxial layer.
On the other hand, if sapphire is used as a substrate its material properties cause major distortions and defects during InGaN growth, which reduce the internal luminous efficiency.
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Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.
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Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.
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