SiGe Bipolar On Thin SOI
IBM says that performance can be improved fourfold or power consumption reduced fivefold in wireless devices compared with state-of-the-art thin-silicon bipolar technology.
CMOS computing chips show higher performance when built on thin layer silicon-on-insulator (SOI) wafers. However, traditional silicon germanium (SiGe) bipolar transistors cannot be built on thin SOI. Until now, no one had been able to find a technique to combine CMOS and SiGe bipolar onto one wafer.
Dr TC Chen, vice-president for Science and Technology at IBM Research, says: " The new chip design could be implemented within five years, enabling applications such as video streaming on cell phones."
IBM presented details of the design at the 2003 Bipolar/BiCMOS Circuits and Technology Meeting in Toulouse, France.
AngelTech Live III: Join us on 12 April 2021!
AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!
Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.
We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.
We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.
Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.
Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.
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