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Tuesday 10th December 2013
The companies have agreed to settle all outstanding disputes
Monday 9th December 2013
A new collaboration will focus on Leti's sequential 3D technology which is aimed at processing all functions in a single semiconductor manufacturing flow
Monday 9th December 2013
Sandwiching a piezoelectric material between silicon layers in a transistor means that the device is only put under pressure when necessary
Monday 9th December 2013
DARPA’s iPhoD program has concluded with a demonstration of low signal loss records with microchip-scale, integrated waveguides for photonic delay
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Monday 9th December 2013
The provider of patented, low-temperature direct bonding technology for 3D integration, has sold its 3D IC development lab to Tezzaron. Wholly owned subsidiary of Tezzaron, Novati Technologies will operate the facility
Friday 6th December 2013
Japan is said to represent the largest regional semiconductor fabrication material market. Taiwan, thanks to a strong semiconductor foundry base, ranks as the fastest growing market with a CAGR of 5.3 percent
Friday 6th December 2013
  Due to the geometry of III-V nanowires, they could be grown directly on silicon chips in a way that alleviates restrictions due to crystal lattice mismatch - thus yielding high-quality material with the potential for high performance. If a number of hurdles are overcome, possible applications include.integrated photonics, on-chip optical interconnects amd optical transistors to speed up computers
Friday 6th December 2013
  The thermal slide, thin-wafer handling debonder is suited for use with thinned silicon and III-V compound semiconductor substrates
Thursday 5th December 2013
Sales for 2013 are set to be the highest ever. Worldwide sales increased for eighth straight months and topped $27 billion for the first time ever in October; WSTS forecasts project a growth of 4.4 percent in 2013 and 4.1 percent in 2014
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Thursday 5th December 2013
These SOI type wafers are suited to the manufacturing of the latest 4G/LTE smartphones and RF devices
Thursday 5th December 2013
The paradigmE XP system has been designed to meet the demands of advanced semiconductor technologies. It is focused on semi-critical applications for next generation 3-D devices and memories such as NAND and DRAM
Wednesday 4th December 2013
The firm's hysteretic boost controller is designed for battery level inputs
Wednesday 4th December 2013
This follows a successful year for the Deep Sub-Micron Embedded SRAM firm which has successfully taped out a demonstrator chip and secured a large amount of financing
Wednesday 4th December 2013
An innovative accelerometer design boosts the sensor’s thermal and mechanical stability to deliver robust high performance in a compact footprint
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Wednesday 4th December 2013
The firm's new Bluetooth platform is suited for use in smart watches, activity monitors, slim smartphones and tablet styluses
Wednesday 4th December 2013
The semiconductor industry has gone from decline to profit in the last year thanks to DRAM and NAND, and sees Samsung and Qualcomm gaining ground on Intel
Tuesday 3rd December 2013
Strong sales growth in the semiconductor equipment market is also forecast for 2014
Tuesday 3rd December 2013
The combination of Toshiba's NAND technology with OCZ’s SSD expertise will enable Toshiba to further strengthen its SSD business

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