Info
Info
News search:

< Page of 403 >

News


Wednesday 3rd July 2013
Although the majority of the $25 million funding for power devices will probably be used for wide band gap compound semiconductors gallium nitride (GaN) and silicon carbide (SiC), innovations could also make silicon a contender
Wednesday 3rd July 2013
The firm's light source has achieved 2 hours of continuous operation. This milestone is bringing the firm another step closer towards reaching production level LPP EUV light sources
Wednesday 3rd July 2013
The company's AP300W system will be used for high-volume advanced packaging applications for communication devices
Info
Tuesday 2nd July 2013
The F450C group has been set up to spearhead construction and infrastructure efforts for 450mm wafer fabs
Tuesday 2nd July 2013
The material remains strong even under high temperatures and shows high chemical resistance. This makes it suitable for inner linings and heat shields in the high temperature industrial ovens used in semiconductor manufacturing
Tuesday 2nd July 2013
Thee firm's patents focus on wafer level packaging, Post Wafer fab Processing or mid-end processing, TSV, flip chip interconnect, integrated passive devices (IPD) and 2.5D/3D package integration
Monday 1st July 2013
Researchers over come fundamental law of optical science that could lead to Petabyte storage possible on a single disc
Info
Monday 1st July 2013
The new MOSFETs will help designers achieve top power density and efficiency for telecoms and advanced computing solutions
Monday 1st July 2013
The firm says its electroforming technology enables finer pitches
Monday 1st July 2013
The chip enables complex systems requiring large software and data sets, such as EMS
Info
Monday 1st July 2013
The plant closure will affect about 1,100 employees in Malaysia, approximately 11 percent of the firm's total global workforce
Monday 1st July 2013
The firm's three high-volume-production room-temperature debonding process types are supported by a supply chain of seven qualified adhesive suppliers to enable greater manufacturing flexibility
Friday 28th June 2013
FinFET transistors are among the 3-D microchip structures that could be measured using a new technique known as through-focus scanning optical microscopy (TSOM)

×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Silicon Semiconductor Magazine, the Silicon Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info