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Magnetic Memory - As Early As 2005

IBM and Infineon Technologies have succeeded in integrating 128kbit magnetic memory (MRAM) components into a high-performance logic base.

The companies
hope to accelerate the commercialisation of MRAM possibly replacing some of
todays memory technologies as early as 2005. MRAM could lead to instant
on computers, allowing users to turn computers on and off as quickly as a
light switch.



The MRAM core is fabricated with a 0.18micron logic-based process
technology, claimed as the smallest size reported to date for MRAM
technology. The MRAM memory cell measures 1.4microns2.
MRAM technology promises significant improvements by storing more
information, accessing it faster and using less battery power than
electronic memory. The aim is the storage capacity and low-cost of dynamic
RAM (DRAM), the high speed of static RAM (SRAM) and the non-volatility of
Flash memory.



Dr Wilhelm Beinvogl, chief technology officer (CTO) of Infineons Memory
Product division, comments: "Nonvolatile memory technologies like MRAM will
play a major role in technology lifestyle solutions and we want to be the
number one semiconductor company in this area by having a product
demonstrator jointly developed with IBM available early 2004. Together with
Altis Semiconductor, a joint venture of IBM and Infineon, we will pave the
way for production readiness of MRAM as early as 2005."



IBM Research pioneered the development of tiny, thin-film magnetic
structures as early as 1974. In the late 1980s, IBM scientists made a string
of key discoveries about the giant magneto-resistive (GMR) effect in
thin-film structures. These developments enabled IBM to create the first
super-sensitive GMR read/write heads for hard-disk drives, stimulating
dramatic increases in data density. Altering many of the GMR materials
enabled IBM scientists to make the magnetic tunnel junctions that are at the
heart of MRAM. In November 2000, IBM and Infineon established a joint MRAM
development programme.



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