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EUV Monitoring Development

International SEMATECH (ISMT) and Exitech have agreed to jointly develop the world's first 13.5nm wavelength aerial image monitor tool for pattern and defect inspection of extreme ultraviolet (EUV) reticles. This first alpha tool built by Exitech will be used for EUV mask blank and defect inspection at the International SEMATECH North (ISMTN) NanoFab 1 EUV mask blank facility in Albany, New York. The tool is scheduled for delivery in Q3 2005
International SEMATECH (ISMT) and Exitech have agreed to jointly develop the
world's first 13.5nm wavelength aerial image monitor tool for pattern and
defect inspection of extreme ultraviolet (EUV) reticles. This first alpha
tool built by Exitech will be used for EUV mask blank and defect inspection
at the International SEMATECH North (ISMTN) NanoFab 1 EUV mask blank
facility in Albany, New York. The tool is scheduled for delivery in Q3 2005.


Rather than using demagnified images of masks to expose photoresist-coated
silicon wafers as in stepper/scanning photolithography exposure tools,
aerial image monitors are used to obtain at wavelength magnified electronic
images of the patterns and defects on reticles. By emulating the optics as
seen by the reticle in lithography stepper/scanner tools, the captured
images are used to review and characterise features on the reticle and to
investigate how they likely will print in an exposure tool.


"By 2009, if we are to stay on the industry's historic productivity curve,
the manufacturing requirements of 32Gbit memory and 20GHz processor chips
will call for photolithography on wafers with critical features sizes as
small as 20-50nm", says Malcolm Gower, chairman and technical director of
Exitech.
The Exitech EUV aerial image monitor tool will incorporate a discharge
source producing radiation at a wavelength of 13.5nm and an EUV imaging
objective lens manufactured by SSG Tinsley. The tool is targeted to resolve
minimum feature sizes on EUV reflection reticles of 120nm and below.
Mirrors of the objective will be polished to the smoothness of a single atom
(0.2nm), coated with alternating thin reflective layers of molybdenum and
silicon. The mirrors then need to be aligned to an accuracy of less than
1nm. Exitech is scheduled to install an MS-13 Microstepper exposure tool for
EUV resist evaluation and testing at the NanoFab 2 facility of ISMTN later
this year.
The aerial image monitor tool will be used for EUV mask blank and defect
inspection as part of International SEMATECH's efforts to develop the
necessary infrastructure for EUV lithography.
Additionally, the tool will provide early learning development in EUV
lithography technologies, allowing ISMT and Exitech to study production tool
issues associated with the inspection of mask blanks, pattern features and
defects in an ultra-high vacuum environment using plasma discharge sources,
all-reflective optical components, reticles and associated handling
equipment.



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