New Methods Of 3D Chip Integration (GmbH, Radfeld/Austria)
In the background, a quieter revolution is taking place, one that cannot be baldly captured in slogans. Instead it causes more radical changes. We are talking about process technologies, manufacturing structures and new forms of collaboration between industry partners.
The reasons for this are the ever-increasing demand for modern semiconductor applications and continued extreme cost pressure. Conventional technologies cannot resolve these issues.
Innovative process technologies require closer collaboration between partners as the boundaries between semiconductor manufacture and assembly and packaging are becoming increasingly blurred. It is worth the IC manufacturer's while to communicate with their assembly partner at an early stage to ensure that they benefit from the most efficient system solutions offering the greatest reliability and performance results at the most competitive prices.
Trends and their limitations
The most important demands on microelectronics include more functionality at the chip level, smaller packages, shorter time-to-market and greater design security - and all of this at continually lower costs. SOCs (systems-on-chip) as a miniaturised and cost-effective response to the first challenge have brought great progress, but they quickly face limiting economic factors. This is especially true with embedded technologies for performance enhancement, where at least two different process technologies exist on the chip. An example would be the combination of high-density logic and broadband high-frequency circuits. Mixed technologies like this could be produced with improved performance at a lower cost by using different chip types suited for respective functions.
This is where the next challenge comes in that is sometimes known as "the wiring crisis". Connecting multi-pin chips at the board or substrate level leads to difficult routing and interference, especially with parallel data processing circuits and high-frequency applications. A solution can be found in the third dimension using stacks of chips. Here the boundaries between semiconductor manufacturing and packaging become blurred, requiring the integration of the assembly partner in the product and process definition.
Methods of 3D chip integration
The first stacked chips used components with peripheral connections adhesive-bonded and connected to each other at the edge with wire bonding. This is still a widely used method. A new approach developed by Infineon Technologies and Datacon Semiconductor Equipment bundles semiconductor production and packaging expertise as critical elements in a concerted effort to develop high-performance, low cost solutions. The new process allows a parallelisation of 3-dimensional (3D) chip integration. The work was carried out as part of a VSI project (Vertical System Integration) under the German federal government's Ministry of Education, Science, Research and Technology (BMBF). The two companies have completed development through to the production stage.
Expertise with surface-array pin patterns transferred to the inter-IC level was the starting point. Contact surfaces for the new process were copper squares measuring 10x10µm distributed over the chip surface in a 20µm grid. The copper squares were connected with a diffusion soldering procedure.
Innovative technology
The technology is called SOLID F2F, where SOLID stands for solid-liquid inter-diffusion, a bonding technology that uses a special soldering process. F2F stands for face-to-face, describing the orientation of two chips with their active sides facing each other.
Figure 1 shows the structure of a two-layer stack in SOLID F2F technology. The surface of the bottom chip is 5µm-thick copper. The top chip has a congruent structure of copper, which is also covered with a 3µm-thin layer of tin. The electrical connections are made through 10x10µm contact pads surrounded by 10µm-wide, non-metallised channels for electrical isolation. The rest of the surface is also metal-coated, forming an electrical barrier between the chips to be connected. The top and bottom chips are positioned congruently and soldered with the tin layer of the top chip. Conventional techniques are used to bond the external input and output connections. This SOLID bonding technology forms a contact interface that is only about 10µm thick with a contact density of more than 105/cm2. This guarantees excellent electrical performance.
This flat F2F metal connection is an inexpensive alternative to the increasing connection overhead for planar substrate or board connections. It offers higher signal integrity and less crosstalk, avoiding many problems common with high-frequency circuits.
Precise production equipment
Two Datacon systems represent the core technology for implementing the chip-stacking process. A high-precision flip-chip bonder (Figure 2) detaches the chips from wafer tape, flips them 180¡, optically aligns and then bonds them to a bottom wafer with a temporary fixing agent that holds the chips in position.
In the next process step the bottom wafer, completely covered with the top chips, is transferred as one unit to a specially developed chip-to-wafer bonder. Here it is hard-soldered in a forming gas atmosphere at 270¡C. The liquid tin reacts with the copper surfaces and is transformed into the high-melting-point alloy Cu-3Sn. This inter-metallic phase is thermodynamically stable, with a melting point of 600¡C, ensuring a temperature hierarchy with subsequent processes. In addition, the alloy retains exceptional electrical and thermal conductivity. The stacked chips are then detached and fed to a conventional assembly process.
AngelTech Live III: Join us on 12 April 2021!
AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!
Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.
We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.
We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.
Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.
Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.
So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.
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