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Composed metrology for metal film thickness
Thermo Electron Corporation has announced the release of its latest X-ray fluorescence instrument for semiconductor metrology, the MicroXR microbeam XRF platform. Designed for on-line and near-line measurements on semiconductor wafers, optical devices, high-density chip-scale packaging and substrate applications, the MicroXR presents particular benefits for the semiconductor and microelectronics markets.
The MicroXR uses a combination of microbeam X-ray collimation technology and traditional energy dispersive XRF (EDXRF) spectroscopy. The end result is a non-destructive metrology technique that measures the thickness and composition of up to five layers of deposited metals simultaneously. Metal film thickness ranges from micron to angstrom levels. The new XRF platform can also determine bulk alloy composition for up to 20 elements.
The use of optically collimated X-rays delivers intensity gains of up to 1000 times over traditional XRF tools. X-rays generated by a 50W X-ray tube are redirected and focused on the sample surface. The resulting intensity on the sample surface is equivalent to the intensity generated by a 50kW X-ray tube. Solid state detector technology, which operates without liquid nitrogen cooling, in combination with digital pulse processing, guarantees high count rate throughput performance. This technology dramatically reduces measurement time while greatly increasing accuracy, precision and reproducibility.
Etching a new standard
Tokyo Electron has announced a significant improvement in the design of their SCCM (Super Capacitively Coupled Module) chamber. The focus ring and supporting parts have been redesigned to greatly reduce and possibly eliminate the deposition of backside polymer at the wafer edge and bottom.
This chamber modification improves the tool’s throughput by eliminating the processing time dedicated to backside polymer removal. In addition to throughput, yield performance is enhanced, since backside polymer and other various removal processes potentially damage the underlying circuits.
“Customers have told us that this problem is affecting their bottom line and we have responded with a solution that eliminates backside polymer,” said Takashi Ito, TEL vice president & general manager of Etch Systems Business Unit. “We believe the advances we have recently made to chamber design will significantly and immediately improve their low-k etch performance.”
TEL developed this new technology at their Process Technology Center in Yamanashi, Japan. This premiere 300mm facility is fully capable of producing a finished 300mm wafer that can be tested and utilized for tool development.
TEL plans on releasing other significant improvements to their plasma chambers in the coming year that will impact the speed and technological capabilities of their plasma etch chambers.
Spotlight for a semiconductor
Bede X-ray have announced that the BedeMetrix X-ray metrology tools now provide enhanced small spot measuring capability for semiconductor wafers from 50mm to 300mm. This new capability allows for measurement of sub-100 micron test pads in chips and scribe lines on processed wafers.
This leading-edge small spot measuring capability provides automated characterization of numerous semiconductor fabrication processes, substantially increasing cost control and yield enhancement over other metrology methods. Typical applications for the BedeMetrix include product range, epilayer composition and thickness, polycrystalline layer thickness, phase and texture, pore size, and pore size distribution.
Thermo Electron Corporation has announced the release of its latest X-ray fluorescence instrument for semiconductor metrology, the MicroXR microbeam XRF platform. Designed for on-line and near-line measurements on semiconductor wafers, optical devices, high-density chip-scale packaging and substrate applications, the MicroXR presents particular benefits for the semiconductor and microelectronics markets.
The MicroXR uses a combination of microbeam X-ray collimation technology and traditional energy dispersive XRF (EDXRF) spectroscopy. The end result is a non-destructive metrology technique that measures the thickness and composition of up to five layers of deposited metals simultaneously. Metal film thickness ranges from micron to angstrom levels. The new XRF platform can also determine bulk alloy composition for up to 20 elements.
The use of optically collimated X-rays delivers intensity gains of up to 1000 times over traditional XRF tools. X-rays generated by a 50W X-ray tube are redirected and focused on the sample surface. The resulting intensity on the sample surface is equivalent to the intensity generated by a 50kW X-ray tube. Solid state detector technology, which operates without liquid nitrogen cooling, in combination with digital pulse processing, guarantees high count rate throughput performance. This technology dramatically reduces measurement time while greatly increasing accuracy, precision and reproducibility.
Etching a new standard
Tokyo Electron has announced a significant improvement in the design of their SCCM (Super Capacitively Coupled Module) chamber. The focus ring and supporting parts have been redesigned to greatly reduce and possibly eliminate the deposition of backside polymer at the wafer edge and bottom.
This chamber modification improves the tool’s throughput by eliminating the processing time dedicated to backside polymer removal. In addition to throughput, yield performance is enhanced, since backside polymer and other various removal processes potentially damage the underlying circuits.
“Customers have told us that this problem is affecting their bottom line and we have responded with a solution that eliminates backside polymer,” said Takashi Ito, TEL vice president & general manager of Etch Systems Business Unit. “We believe the advances we have recently made to chamber design will significantly and immediately improve their low-k etch performance.”
TEL developed this new technology at their Process Technology Center in Yamanashi, Japan. This premiere 300mm facility is fully capable of producing a finished 300mm wafer that can be tested and utilized for tool development.
TEL plans on releasing other significant improvements to their plasma chambers in the coming year that will impact the speed and technological capabilities of their plasma etch chambers.
Spotlight for a semiconductor
Bede X-ray have announced that the BedeMetrix X-ray metrology tools now provide enhanced small spot measuring capability for semiconductor wafers from 50mm to 300mm. This new capability allows for measurement of sub-100 micron test pads in chips and scribe lines on processed wafers.
This leading-edge small spot measuring capability provides automated characterization of numerous semiconductor fabrication processes, substantially increasing cost control and yield enhancement over other metrology methods. Typical applications for the BedeMetrix include product range, epilayer composition and thickness, polycrystalline layer thickness, phase and texture, pore size, and pore size distribution.
Composed metrology for metal film thickness
Thermo Electron Corporation has announced the release of its latest X-ray fluorescence instrument for semiconductor metrology, the MicroXR microbeam XRF platform. Designed for on-line and near-line measurements on semiconductor wafers, optical devices, high-density chip-scale packaging and substrate applications, the MicroXR presents particular benefits for the semiconductor and microelectronics markets.
The MicroXR uses a combination of microbeam X-ray collimation technology and traditional energy dispersive XRF (EDXRF) spectroscopy. The end result is a non-destructive metrology technique that measures the thickness and composition of up to five layers of deposited metals simultaneously. Metal film thickness ranges from micron to angstrom levels. The new XRF platform can also determine bulk alloy composition for up to 20 elements.
The use of optically collimated X-rays delivers intensity gains of up to 1000 times over traditional XRF tools. X-rays generated by a 50W X-ray tube are redirected and focused on the sample surface. The resulting intensity on the sample surface is equivalent to the intensity generated by a 50kW X-ray tube. Solid state detector technology, which operates without liquid nitrogen cooling, in combination with digital pulse processing, guarantees high count rate throughput performance. This technology dramatically reduces measurement time while greatly increasing accuracy, precision and reproducibility.
Etching a new standard
Tokyo Electron has announced a significant improvement in the design of their SCCM (Super Capacitively Coupled Module) chamber. The focus ring and supporting parts have been redesigned to greatly reduce and possibly eliminate the deposition of backside polymer at the wafer edge and bottom.
This chamber modification improves the tool's throughput by eliminating the processing time dedicated to backside polymer removal. In addition to throughput, yield performance is enhanced, since backside polymer and other various removal processes potentially damage the underlying circuits.
“Customers have told us that this problem is affecting their bottom line and we have responded with a solution that eliminates backside polymer,” said Takashi Ito, TEL vice president & general manager of Etch Systems Business Unit. “We believe the advances we have recently made to chamber design will significantly and immediately improve their low-k etch performance.”
TEL developed this new technology at their Process Technology Center in Yamanashi, Japan. This premiere 300mm facility is fully capable of producing a finished 300mm wafer that can be tested and utilized for tool development.
TEL plans on releasing other significant improvements to their plasma chambers in the coming year that will impact the speed and technological capabilities of their plasma etch chambers.
Spotlight for a semiconductor
Bede X-ray have announced that the BedeMetrix X-ray metrology tools now provide enhanced small spot measuring capability for semiconductor wafers from 50mm to 300mm. This new capability allows for measurement of sub-100 micron test pads in chips and scribe lines on processed wafers.
This leading-edge small spot measuring capability provides automated characterization of numerous semiconductor fabrication processes, substantially increasing cost control and yield enhancement over other metrology methods. Typical applications for the BedeMetrix include product range, epilayer composition and thickness, polycrystalline layer thickness, phase and texture, pore size, and pore size distribution.
Thermo Electron Corporation has announced the release of its latest X-ray fluorescence instrument for semiconductor metrology, the MicroXR microbeam XRF platform. Designed for on-line and near-line measurements on semiconductor wafers, optical devices, high-density chip-scale packaging and substrate applications, the MicroXR presents particular benefits for the semiconductor and microelectronics markets.
The MicroXR uses a combination of microbeam X-ray collimation technology and traditional energy dispersive XRF (EDXRF) spectroscopy. The end result is a non-destructive metrology technique that measures the thickness and composition of up to five layers of deposited metals simultaneously. Metal film thickness ranges from micron to angstrom levels. The new XRF platform can also determine bulk alloy composition for up to 20 elements.
The use of optically collimated X-rays delivers intensity gains of up to 1000 times over traditional XRF tools. X-rays generated by a 50W X-ray tube are redirected and focused on the sample surface. The resulting intensity on the sample surface is equivalent to the intensity generated by a 50kW X-ray tube. Solid state detector technology, which operates without liquid nitrogen cooling, in combination with digital pulse processing, guarantees high count rate throughput performance. This technology dramatically reduces measurement time while greatly increasing accuracy, precision and reproducibility.
Etching a new standard
Tokyo Electron has announced a significant improvement in the design of their SCCM (Super Capacitively Coupled Module) chamber. The focus ring and supporting parts have been redesigned to greatly reduce and possibly eliminate the deposition of backside polymer at the wafer edge and bottom.
This chamber modification improves the tool's throughput by eliminating the processing time dedicated to backside polymer removal. In addition to throughput, yield performance is enhanced, since backside polymer and other various removal processes potentially damage the underlying circuits.
“Customers have told us that this problem is affecting their bottom line and we have responded with a solution that eliminates backside polymer,” said Takashi Ito, TEL vice president & general manager of Etch Systems Business Unit. “We believe the advances we have recently made to chamber design will significantly and immediately improve their low-k etch performance.”
TEL developed this new technology at their Process Technology Center in Yamanashi, Japan. This premiere 300mm facility is fully capable of producing a finished 300mm wafer that can be tested and utilized for tool development.
TEL plans on releasing other significant improvements to their plasma chambers in the coming year that will impact the speed and technological capabilities of their plasma etch chambers.
Spotlight for a semiconductor
Bede X-ray have announced that the BedeMetrix X-ray metrology tools now provide enhanced small spot measuring capability for semiconductor wafers from 50mm to 300mm. This new capability allows for measurement of sub-100 micron test pads in chips and scribe lines on processed wafers.
This leading-edge small spot measuring capability provides automated characterization of numerous semiconductor fabrication processes, substantially increasing cost control and yield enhancement over other metrology methods. Typical applications for the BedeMetrix include product range, epilayer composition and thickness, polycrystalline layer thickness, phase and texture, pore size, and pore size distribution.
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Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
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