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Presto Engineering and Micromanipulator announce business development alliance

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Presto’s in-silicon analysis services now available on the 300mm probe station from Micromanipulator.
Presto Engineering, a provider of product engineering services to the semiconductor industry, announced that it has established a collaborative business development alliance with the Micromanipulator Company, which will enhance access to its wafer level advanced in-silicon analysis services for customers needing 300 millimetre wafer probing support. Micromanipulator, is a supplier of analytic probing solutions for semiconductor wafer testing. Through this alliance, Micromanipulator and Presto can offer probing support services to integrated device manufacturers (IDMs) and fabless semiconductor manufacturers, which are broadly represented in Silicon Valley. Under this agreement, the Presto facilities in San Jose, Calif., will also serve as a product demonstration site for Micromanipulator.

“One of the critical needs of our customers is for advanced probing solutions for 300mm wafers, especially for fabless companies looking to conduct thorough wafer level characterisation prior to packaging,” said Michel Villemain, Presto’s CEO. “Within days of installation of the P300J from Micromanipulator, we successfully commenced 12 inch wafer probing on a customer’s new 65nm design, utilising the advanced control and thermal features of the station. We are very pleased to offer this additional capability here at our lab.”

Frank Gazzano, president of Micromanipulator, commented, “As we continue to expand the worldwide adoption of our P300A and P300J 300mm systems, we are pleased to partner with a firm like Presto Engineering, which shares our focus on applications development to meet the reliability, product integration and failure analysis requirements among our IDM and fabless semiconductor customer base.”

The alliance emphasises the importance of Presto Engineering’s in-silicon analysis capabilities as part of the company’s Design Success Analysis offering for process technologies down to the 45nm node. In-silicon analysis includes emission and laser based power, leakage and interconnect characterisation; internal timing measurement; and focused ion beam (FIB) circuit edit. With the increase in the number of interconnect layers, this analysis is facilitated by access to the transistor level from the backside (silicon side) of the wafer.
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