News Article
UMC announces foundry industry’s first 28nm SRAMs
Double patterning immersion lithography and advanced strained silicon technology is used to deliver fully functional 28nm chips.
UMC, a semiconductor foundry, announced that it has manufactured the foundry industry’s first fully functional 28nm SRAM chips. The chips are based on UMC’s independently developed low leakage (LL) process technology. UMC utilised advanced double patterning immersion lithography and strained silicon technology to produce the chips, which feature very small six transistor SRAM cell sizes of approximately 0.122
μm2.
“UMC’s continued R&D commitment has helped us maintain our leadership position in nanometre technology over the years,” said S.C. Chien, vice president of advanced technology development at UMC. “We are excited about this latest achievement for 28nm, as it provides a solid starting point for further development of this technology node towards mainstream availability down the road. Improvements on areas such as minimum supply voltage, modelling of strain effects, and natural yield will be our focus going forward.”
UMC incorporates a dual approach for its 28nm technology to address different market applications. The foundry uses conventional silicon gate/silicon-oxy-nitride gate oxide technology for its LL (low leakage) process, which is ideal for portable applications such as mobile phone ICs. UMC’s second option will utilize a high-k/metal gate stack for speed intensive products such as graphic, application processor, and high speed communication ICs. UMC’s 28nm process provides almost twice the density of the 40nm technology, which is currently being produced at its 300mm fabs. UMC will also provide foundry services for customised 32nm technologies based on its 28nm process platform.
μm2.
“UMC’s continued R&D commitment has helped us maintain our leadership position in nanometre technology over the years,” said S.C. Chien, vice president of advanced technology development at UMC. “We are excited about this latest achievement for 28nm, as it provides a solid starting point for further development of this technology node towards mainstream availability down the road. Improvements on areas such as minimum supply voltage, modelling of strain effects, and natural yield will be our focus going forward.”
UMC incorporates a dual approach for its 28nm technology to address different market applications. The foundry uses conventional silicon gate/silicon-oxy-nitride gate oxide technology for its LL (low leakage) process, which is ideal for portable applications such as mobile phone ICs. UMC’s second option will utilize a high-k/metal gate stack for speed intensive products such as graphic, application processor, and high speed communication ICs. UMC’s 28nm process provides almost twice the density of the 40nm technology, which is currently being produced at its 300mm fabs. UMC will also provide foundry services for customised 32nm technologies based on its 28nm process platform.
