News Article
Varian Semiconductor collaborate with Soitec
Varian Semiconductor have announced that they have entered into a collaboration with Soitec.
The two companies are collaborating on the development and qualification of a new high current implanter to be used in Soitec’s patented Smart Cut technology for the production requirements of upcoming generations of SOI wafers.
The Smart Cut technology used to manufacture SOI substrates exploits ion implantation, wafer bonding and atomic level splitting. Ion implantation weakens the silicon crystal at an extremely precise depth and acts as an atomic scalpel, lifting off a thin layer from the donor substrate and placing it onto a different substrate.
The VIISta Single Wafer High Current implanter from Varian has proven, dual-magnet technology that minimizes defectivity and maximizes yield. Additionally, the use of ribbon beam technology provides productivity, cost-of-ownership and uniformity advantages for the splitting and layer transfer processes used in the Smart Cut technology.
“Soitec is committed to meeting the industry’s requirements for the highest quality engineered substrates. Our collaboration with the leading supplier of ion implant equipment is key for us to meet the most advanced requirements in terms of uniformity, especially for fully depleted applications at the 22 nm node,” says Paul Boudre, Chief Operating Officer of the Soitec Group.
Gary Dickerson, Chief Executive Officer of Varian said, “We are looking forward to working together with Soitec to enable future device scaling with our dual-magnet ribbon beam technology. Through this collaboration we have the opportunity to add a whole new growth market to our portfolio of applications.”
The Smart Cut technology used to manufacture SOI substrates exploits ion implantation, wafer bonding and atomic level splitting. Ion implantation weakens the silicon crystal at an extremely precise depth and acts as an atomic scalpel, lifting off a thin layer from the donor substrate and placing it onto a different substrate.
The VIISta Single Wafer High Current implanter from Varian has proven, dual-magnet technology that minimizes defectivity and maximizes yield. Additionally, the use of ribbon beam technology provides productivity, cost-of-ownership and uniformity advantages for the splitting and layer transfer processes used in the Smart Cut technology.
“Soitec is committed to meeting the industry’s requirements for the highest quality engineered substrates. Our collaboration with the leading supplier of ion implant equipment is key for us to meet the most advanced requirements in terms of uniformity, especially for fully depleted applications at the 22 nm node,” says Paul Boudre, Chief Operating Officer of the Soitec Group.
Gary Dickerson, Chief Executive Officer of Varian said, “We are looking forward to working together with Soitec to enable future device scaling with our dual-magnet ribbon beam technology. Through this collaboration we have the opportunity to add a whole new growth market to our portfolio of applications.”
