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Funding furthers broadband goals

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IQE wins funding for next generation broadband access research
IQE has announced that it has won funding for research into compound semiconductor laser products for the next generation of high speed broadband access devices. The funding comes from the Technology Strategy Board (TSB), which is the organisation that drives technological innovation in the UK. The TSB is investing £1 million to help companies carry out initial research that will ultimately lead to the introduction of internet access technology with speeds up to 10Gb/s which is 1,000 times faster than current broadband speeds.

IQE and chip foundry partner CST Global have been collaborating on development of high specification diode laser components for such applications. The partners have been awarded three feasibility studies in the programme in a parallel approach to look at low cost laser sources for uncooled, high speed, extended reach Fibre To The Home (FTTH) applications based on AlInGaAs laser products.

Project lead Dr Wyn Meredith commented: “We are looking to solve the paradox of producing diode sources with telecoms grade quality with consumer grade pricing for this last link of access to the home. We are already seeing unprecedented growth in InP based epitaxial products driven by FTTH deployment in Asia, and we are preparing to address Next Generation network expansion with high value add foundry products to enable our customers to react quickly.

“This phase of optical network expansion is rewriting the rulebook in terms of the cost - quality equation; we are enabling a new breed of component vendors who have been quick to adopt the foundry model, and are proving far more agile and resilient than their vertically integrated competitors in the current market conditions. Involvement in this programme will result in rapid introduction of standardised foundry epitaxial and fabrication level laser diode solutions which will have proven performance in terms of transmission speed and optical power output, compatible with larger (4”) wafer formats.”

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