Next generation 3D capacitors on the market
CEA-Leti and IPDiA have developed a new process to deposit atomic medium-K dielectric layers into the severe architectures of IPDiA's 3D dimensional metal-insulator-metal capacitors.
The key atomic layer deposition (ALD) process enables a uniform coating of high aspect ratio surfaces and exact thickness control on an atomic scale. The team achieved capacitance density of 550nF/mm2 by keeping leakage current and parasitic levels as low as in its 250nF/mm2 PICS3 product. The "PICS" 3D high-density capacitors substantially increase the surface and capacitance whilst maintaining a small footprint.
This technology has high stability, in terms of temperature, voltage and ageing, excellent reliability and very low parasitic elements (ESR, ESL). The compactness and superior performance suggests it is a viable alternative to discrete component MLCC and tantalum capacitors.
The combination of high performance, stability, reliability and very high capacitance density should suit customers in a number of markets. These would include the medical, harsh environment, automotive, communication, industrial, and defence/aerospace sectors.
Targeted applications include DC/DC converter and decoupling functions within limited space: IC decoupling, MEMS, Sensors, Memory stick, Smartcard.
IPDiA and CEA-Leti are continuing their developments to stabilise the process and to accelerate market deployment. Their next step is to achieve 1μF/mm2.
