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NXP Unleashes First 2mm x 2mm MOSFETs With Tin-Plated Side Pads

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Space-saving silicon semiconductor devices for power conversion and load switches enhance NXP's portfolio of ultra-small, low Rds(on) DFN MOSFETs

NXP Semiconductors has introduced what it says is the industry's first MOSFETs in a 2mm x 2mm low-profile DFN (discrete flat no-leads) package with tin-plated, solderable side pads.


These side pads offer the advantage of optical soldering inspection, as well as a better quality of solder connection compared to conventional leadless packages.


Available immediately, the new PMPB11EN and PMPB20EN 30V N-Channel MOSFETs are the first of more than 20 devices housed in the DFN2020MD-6 (SOT1220) package. Both MOSFETs have a maximum drain current (ID) of over 10A, and very low Rds(on) values of typically 12mΩ and 16.5mΩ at 10V, respectively, for reduced conduction losses, which enable lower power consumption and longer battery life.


At a compact 0.6mm in height, the new DFN2020 MOSFETs are also thinner than most 2mm x 2mm products on the market today, making them ideal for ultra-small load switches, power converters, and charger switches in portable applications such as smartphones and tablets.


The MOSFETs are also well suited for other space-constrained applications including DC motors, server and network communications, as well as LED lighting, where power density and efficiency are critical. Eight times smaller than standard SO8 packages, DFN2020 offers comparable thermal resistance, and can replace many larger MOSFET packages such as SO8, 3x3 or TSSOP8 with the same Rds(on) value range.

 

The new ultra-small leadless MOSFETs will add to NXP's more than 60 types in 2mm x 2mm and 1mm x 0.6mm package sizes by the end of this year. NXP offers both FET and bipolar transistor technologies.

 

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