News Article
Microsemi Expands NPT IGBT Family
Microsemi Corporation is making available three more devices in its new generation of 1200 V non-punch through (NPT) IGBTs.
The APT85GR120B2, APT85GR120L and APT85GR120J transistors are based on Microsemi's advanced Power MOS 8 technology, which it says enables a significant reduction of at least 20 percent in total switching and conduction losses as compared to competitive solutions.
The devices are designed for high power, high performance switch mode products such as arc welders, solar inverters, and uninterruptible and switch mode power supplies. Microsemi's 1200V solutions can be packaged with Microsemi's FREDs or SiC Schottky diodes to provide engineers with a highly integrated solution that allows them to streamline product development efforts.
The devices offer faster switching than similar devices due to a significantly lower gate charge (Qg). Also, more efficient power conversion is enabled by hard switching operation greater than 80 KHz. Easy to parallel (positive temperature coefficient of Vcesat) improves reliability in high power applications and short circuit withstand time rated (SCWT) for reliable operation in applications requiring short circuit capability.
In addition, Microsemi will soon offer an APT85GR120JD60 device that is packaged in a SOT-227 and includes a 60A anti-parallel, ultrafast recovery diode built with Microsemi's proprietary "DQ" generation of low switching loss, avalanche energy rated diode technology.
The APT85GR120B2 transistor is offered in a TO-247 MAX package, the APT85GR120L is packaged in a TO-264 and the APT85GR120J is packaged in a SOT-227.
Microsemi's new NPT IGBTs are fully characterised and in production now. Samples are available through local distributors or local Microsemi sales representatives.
