Toshiba launches low ON-resistance power MOSFET for vehicles
Toshiba Corporation has launched a low-ON-resistance, low-leakage power MOSFET using the latest trench MOS process as an addition to the MOSFET lineup for automotive applications.
The new TK100S04N1L product achieves low ON-resistance (RDS(ON) = 1.9mΩ (typ.) (VGS=10V)) with a combination of the 8th generation trench MOS process "U-MOS VIII-H series" chip and the "DPAK+" package that utilises copper connectors.
With a low leakage current of IDSS of 10μA (max), the product is primarily suited for automotive applications, especially for those demanding high-speed switching, such as motor drives and switching regulators. The firm says a Tch of 175°C is guaranteed.
Samples are available now with mass production scheduled to start in March 2013.
