memsstar wins multiple MEMS etch R&D system orders
Memsstar Limited has announced two strategic etch system order wins from new MEMS customers in Asia.
Memsstar recently shipped an R&D system to manufacturing customers in Korea and India for use in MEMS research and development, representing the first memsstar etch release system orders from these countries.
The R&D tool was selected by both customers for vapour phase isotropic etching of silicon for MEMS structures to support their new product development efforts.
In addition to being suited to R&D applications, memsstar says all its processes are scalable for volume manufacturing using the same processing techniques, offering a seamless process transfer and lower cost of ownership from R&D through to full scale production.
"Our proprietary memsstar systems are aggressively positioned for growth, delivering critical technological differentiators to customers engaged in MEMS etch release and surface coatings," says Tony McKie, general manager of memsstar, Ltd.
"Our advanced process capability is key to minimising process limitations, in turn driving the next generation of structures for our customers. These new orders mark our entry into two important MEMS markets in Asia and reflect our ability to deliver and support our technology around the world."
Memsstar's patented process is compatible with a wide range of metals, especially Al/alloy and other metals commonly used in MEMS mirrors and electrical contacts, while the single wafer processing platform guarantees excellent release etch repeatability with a wide process window to maximise performance and yield. memsstar's dry release etch process using hydrogen fluoride (HF), or xenon difluoride (XeF2), is unique because of its ability to eliminate stiction in a single process.
Stiction is the static friction that needs to be overcome to enable relative motion of stationary objects in contact.
Memsstar says its processes are stable with excellent repeatability, tunaeble etch rates, high uniformity and selectivity.
