News Article
Toshiba touts superfast dual N-ch MOSFET for mobile devices
The low capacitance product supports high-currents and improves the efficiency of high-speed switching
Toshiba Corporation has launched a low capacitance dual N-ch MOSFET for high-speed switches in the high-current charging circuits of mobile devices, such as smartphones and tablets. As additional functions are added to mobile devices, increasing demands are made on the batteries of those devices. Efforts continue to improve the user experience and cut charge times by boosting charge density and significantly increasing the charging current and frequency. Toshiba's new low capacitance product "SSM6N58NU" is the company's latest addition to its dual N-ch MOSFET line-up, suitable as high-speed switches for high-current charging circuits. Relevant applications are in the high-current (up to 4A) charging switches for mobile devices including smartphones, cellular phones, tablets and notebook PCs. The device combines high-current, low ON-resistance, low capacitance and comes in a compact 2mm x 2mm package.