News Article
N-ch power MOSFET for automotive applications
Toshiba Corporation has launched a 100V low-ON-resistance, low-leakage power MOSFET using the latest trench MOS process as the latest addition to its line-up for automotive applications.
The new product, the TK55S10N1, achieves an ON-resistance (VGS) of 10V with a typical RDS(ON) of 5.5mΩ, a combination of a chip in the "U-MOS VIII-H series" fabricated with the latest 8th generation trench MOS process and a "DPAK+" package that utilises copper connectors . The connectors enable the low-ON-resistance.
TK55S10N1
The TK55S10N1 has a Drain-to-source voltage (VDSS) of 100V and a drain current (ID) of 55A. The device exhibits a low leakage current (IDSS) of 10μA (maximum) at the rated voltage.
The product is primarily suited for automotive applications, especially those that demand high-speed switching, such as switching regulators. Samples are available now with mass production scheduled to start in April 2013.
