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News Article

Peregrine & RFMD to tussle over SOI infringement

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Peregrine Semiconductor Corporation, a provider of radio frequency integrated circuits (RFICs), has filed a new lawsuit in the U.S. District Court.

The company alleges the infringement of Peregrine patented intellectual property relating to RFICs and switching technology by RF Micro Devices, Inc. (RFMD).

The suit filed in U.S. District Court for the Southern District of California claims that certain RFMD products infringe a newly issued Peregrine patent relating to silicon-on-insulator (SOI) technology for RFICs.

Peregrine seeks, in addition to damages, to permanently enjoin RFMD from further infringement. This new legal action is in addition to an existing lawsuit filed against RFMD in February 2012 and currently pending in the U.S. District Court.

The new patent, U.S. Patent 8,405,147, concerns Peregrine's trade marked HaRP invention that improves the linearity and circuit performance of RF SOI devices. Peregrine believes the HaRP invention is instrumental for RF SOI devices to successfully meet the demanding RF requirements of advanced mobile wireless applications such as 4G LTE.

"Peregrine has enabled significant advancement in the RF front end architectures of mobile wireless devices with our high performance products and technology. Our innovative products are used extensively in the latest generation of mobile devices," says Jim Cable , president and chief executive officer.

"Peregrine's proprietary UltraCMOS process and design technologies are the result of more than 20 years of intensive research and development activity and the investment of approximately two hundred million dollars. Peregrine is committed to a vigorous defence of its intellectual property and continuing advancements in the field."

Peregrine has been awarded many U.S. and foreign patents based on its work in developing and manufacturing products using CMOS-based semiconductor manufacturing processes. These patented innovations allow RFICs to deliver a combination of high levels of monolithic integration and performance, small size and low power consumption.

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