LightMOS For Reduced Cost
The IGBTs are used as alternatives to the MOSFETs (metal-oxide semiconductor field-effect transistors) typically used in for fluorescent tubes, allowing a 1-to-1 replacement at a 15% lower price. The LightMOS IGBTs are intended for use in ballast inverters as a 600V blocking power switch and are optimised for switching frequencies between 40 and 60kHz.
The IGBTs are claimed as the first in the industry to have monolithically integrated reverse diodes. Low power losses compare with those of MOSFETs, while the IGBT structure creates low temperature dependency. Improved reliability is achieved due to the characteristic IGBT temperature behaviour, which has less risk of the thermal run away that is a critical consideration with MOSFETs.
Infineon's FieldStop technology is combined with a Trench cell (TrenchStop) for low conduction and switching losses, allowing operation closer to specification limits. The FieldStop structure within the power devices ensures a significant reduction in the tail current that occurs during turn-off switching, and the Trench cell limits conduction losses to a minimum due to extremely low saturation voltage. As a result, considerably less heat is generated.
The new LightMOS IGBTs are available now in sample quantities, with volume availability planned in mid-November 2003.
AngelTech Live III: Join us on 12 April 2021!
AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!
Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.
We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.
We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.
Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.
Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.
So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.
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