News Article
Matsuhita to build fab for 90nm 300mm production
Matsushita Electric Industrial (MEI) announced plans to build a semiconductor production facility in Japan for JPY130bn.
The company wants to increase production capacity of advanced system LSIs built on a 90nm 300mm process. MEI plans to begin construction in May 2004 and to launch production toward the end of 2005. Production capacity is expected to reach 7500 wafers per month.
The company will focus on products for five key areas - DVDs, digital TVs (DTVs), mobile communications equipment, SD Memory Cards and network-related equipment. The facility will also be used for CCD (charge coupled device) image sensor production. The plans also call for future upgrading to finer processes toward 65nm and further expanding production capacity to cope with expected increases in demand.
