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Applied and SOITEC join for 45nm germanium technology

Applied Materials and Soitec have agreed to jointly develop advanced germanium-on-insulator (GeOI) and other related critical Ge-based processes designed to significantly enhance transistor performance at the 45nm and beyond technology nodes. The companies will combine Soitec's Smart Cut and engineered substrate expertise with the epitaxial deposition capabilities of the Applied’s Centura reduced pressure (RP) epitaxial deposition system.
Applied Materials and Soitec have agreed to jointly develop advanced germanium-on-insulator (GeOI) and other related critical Ge-based processes designed to significantly enhance transistor performance at the 45nm and beyond technology nodes. The companies will combine Soitec's Smart Cut and engineered substrate expertise with the epitaxial deposition capabilities of the Applied’s Centura reduced pressure (RP) epitaxial deposition system.

The focus of the joint programme is on the development of germanium epitaxial layers that will be transferred using Soitec's patented Smart Cut technology to build GeOI wafers. Centura can apply a range of germanium epi films from 100% germanium to virtually any germanium/silicon combination.

Dr Randhir Thakur, vice president and general manager of Applied Materials' Front End Products group, comments: "Germanium compounds are expected to provide the foundation of many advanced materials in future chips, starting at the 45nm node."

Germanium-based materials allow electrons to flow faster through the material, potentially speeding transistor switching by 3-4x over silicon. Because of bulk silicon's scaling limitations - at and beyond the 45nm chip generation - many chipmakers are evaluating engineered GeOI-type substrates to enhance device performance.

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