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Atomic vapours in sub-65nm research

Aixtron gave details of use of its Tricent atomic vapour deposition (AVD) technology in research by the MEDEA+ T207 programme to integrate high-k materials into the standard CMOS devices for sub-65nm technology nodes. The company announced complementary research using its technology at IMEC a few weeks ago (Bulletin 522, March 17, 2004).
Aixtron gave details of use of its Tricent atomic vapour deposition (AVD) technology in research by the MEDEA+ T207 programme to integrate high-k materials into the standard CMOS devices for sub-65nm technology nodes. The company announced complementary research using its technology at IMEC a few weeks ago (Bulletin 522, March 17, 2004).

T207 continues the initial work of the MEDEA+ T201 project started in 2001. The project team includes Aixtron, Air Liquide, LMGP (INPG), Epichem, LETI, Jobin-Yvon (Horiba) and STMicroelectronics, Philips and Motorola.

The integration of high-k oxide materials in place of standard silicon dioxide has become necessary driven by shrinking device dimensions, where silicon dioxide can no longer fulfil electrical isolation requirements for gate structures.

Aixtron’s AVD technology features pulsed injection of liquid precursors using the company’s Trijet evaporation unit combined with a showerhead design. The technology aims at excellent uniformity as well as a very precise deposition of various high-k materials on an atomic scale.

The major part of the CVD process development will be jointly carried out at STMicroelectronics (Crolles), where an Aixtron 2-chamber Tricent cluster tool is installed. Complementary work will be executed at Aixtron’s demonstration laboratory in Aachen, Germany.

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