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News Article

Aviza protects gate dielectric technology

Tuesday 20th April 2004

Aviza Technology has been awarded a US patent for a new multi-layer composite dielectric film concept for improving electrical properties and thermal stability of gate dielectrics in advanced semiconductor devices. The new film is a composite of high-k metal oxide and metal silicate that enhances compatibility with a poly electrode and silicon substrate at the transistor level. The patented concept was developed for devices with feature sizes of 65nm and below but also has applications at the 90nm level.
Aviza Technology has been awarded a US patent for a new multi-layer composite dielectric film concept for improving electrical properties and thermal stability of gate dielectrics in advanced semiconductor devices. The new film is a composite of high-k metal oxide and metal silicate that enhances compatibility with a poly electrode and silicon substrate at the transistor level. The patented concept was developed for devices with feature sizes of 65nm and below but also has applications at the 90nm level.

At the 65nm technology node, use of emerging atomic layer deposition (ALD) is expected to increase. Aviza Technology ALD products will harness the new film concept that can be sequentially deposited in-situ in a single chamber to offer customers a production-ready solution.

Aviza Technology's intellectual property (IP) portfolio includes more than 160 issued patents and more than 200 pending patent applications. The most recent patent is the first for the company under the name Aviza Technology. Aviza Technology was set up to take over ASML Thermal in 2003 (Bulletin 503, October 17, 2003) – the unit that included legacy technology from Thermco and Silicon Valley Group.

The company has obtained 26 patents since 2000. The company’s overall IP portfolio covers method and apparatus patents in the areas of atmospheric chemical vapour deposition (APCVD), low-pressure chemical vapour deposition (LPCVD), high temperature oxidation and diffusion, low-k dielectric films, chemical mechanical polishing (CMP), and atomic layer deposition (ALD).

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